Dynamical Spin Injection into p-Type Germanium at Room Temperature
نویسندگان
چکیده
منابع مشابه
Room-temperature spin injection from Fe into GaAs.
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2013
ISSN: 1882-0778,1882-0786
DOI: 10.7567/apex.6.023001